| PART |
Description |
Maker |
| IC61C632A-5PQ IC61C632A-6PQI IC61C632A-4TQ IC61C63 |
5ns; 3.3V; 32K x 32 synchronous pipelined static RAM
6ns; 3.3V; 32K x 32 synchronous pipelined static RAM
4ns; 3.3V; 32K x 32 synchronous pipelined static RAM
|
ICSI
|
| CY7C1335 7C1335 CY7C1335-100AC |
32K X 32 CACHE SRAM, 5 ns, PQFP100
32K x 32 Synchronous-Pipelined Cache RAM(32K x 32 同步流水线式高速缓冲存储器 RAM) 32K的32同步流水线缓存内存（32K的32同步流水线式高速缓冲存储器的RAM
From old datasheet system
|
Cypress Semiconductor Corp.
|
| IDT709079L15PF IDT709079S15PF8 IDT709089S9PF IDT70 |
HIGH-SPEED 32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
64K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
32K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
|
Integrated Device Technology, Inc.
IDT
|
| IDT70V9079L15PF IDT70V9079L15PFI IDT70V9089L15PF I |
32K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 3.3V 64/32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
Small Signal Diode; Package: DO-35; No of Pins: 2; Container: Bulk
64K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
SRAM
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT70V9189L9PFI IDT70V9179L12PFI IDT70V9179L6PFI I |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IDT709279S_L IDT709279S9PF IDT709279S9PF8 IDT70927 |
32K x 16 Sync, Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| IDT709379L IDT709379L9PF IDT709379L7PF IDT709379L1 |
x18 Dual-Port SRAM
HIGH-SPEED 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
